BAS28 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 4 of 12
NXP Semiconductors
BAS28
High-speed double diode
7. Characteristics
[1] When switched from IF
= 10 mA to IR
=10mA; RL
= 100
Ω; measured at IR
=1mA.
[2] When switched from IF
=10mA; tr
=20ns.
Table 7. Characteristics
Tamb
=25°C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VF
forward voltage IF
= 1 mA - - 715 mV
IF
= 10 mA - - 855 mV
IF
=50mA --1V
IF
=150mA --1.25V
IR
reverse current VR
=25V --30nA
VR
=75V --1μA
VR=25V; Tj
=150°C --30μA
VR=75V; Tj
=150°C --50μA
Cd
diode capacitance f = 1 MHz; VR
=0V --1.5pF
trr
reverse recovery time
[1]
--4ns
VFR
forward recovery voltage
[2]
--1.75V
(1) Tj
= 150
°C; typical values
(2) Tj
=25°C; typical values
(3) Tj
=25°C; maximum values
Based on square wave currents.
Tj
=25°C; prior to surge
Fig 1. Forward current as a function of forward
voltage
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
0
10?1
021
VF
(V)
11010 102
103
4
300
IF
)
(mA
100
200
mbg382
(1)
(2) (3)
mbg704
10
1
102
IFSM
(A)
tp
(
μs)
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